| Download ABaT™ 3.5 micron amplified detector datasheet | |||
|
Amethyst Barrier Technology, ABaTTM, is Amethyst Research’s new and disruptive infrared (IR) detector technology which offers low noise and high responsivity with excellent linearity over a broad spectral range in the mid-wave IR region. The advanced unipolar barrier architecture reduces dark current, thereby improving signal-to-noise ratio. The use of III-V compound semiconductor materials leverages mature and stable fabrication processes for superior manufacturability. Detectors are available in TO-39 and TO-8 packages with a range of active areas. The operating temperature is optionally controllable by thermoelectric cooling. |
 |
||
Specifications |
|
||
Parameter |
Value |
||
| Detector Element | InAs | ||
| Detectivity D* (peak) (cmHz1/2W-1) |
1.2 x 1010 @ 23°C 1.2 x 1011 @ -40°C |
||
|
Time Constant |
< 1 | ||
| Amplifier Gain (V/A) | 25,000 | ||
| Bandwidth (MHz) | 1 | ||
| Active area (mm x mm) |
¼ x ¼, ½ x ½, 1 x 1 | ||
For large scale orders, we can also provide custome designed dectectors. Please contact us for further information.