Download ABaT™ 3.5 micron amplified detector datasheet | |||
Amethyst Barrier Technology, ABaTTM, is Amethyst Research’s new and disruptive infrared (IR) detector technology which offers low noise and high responsivity with excellent linearity over a broad spectral range in the mid-wave IR region. The advanced unipolar barrier architecture reduces dark current, thereby improving signal-to-noise ratio. The use of III-V compound semiconductor materials leverages mature and stable fabrication processes for superior manufacturability. Detectors are available in TO-39 and TO-8 packages with a range of active areas. The operating temperature is optionally controllable by thermoelectric cooling. |
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Specifications |
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Parameter |
Value |
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Detector Element | InAs | ||
Detectivity D* (peak) (cmHz1/2W-1) |
1.2 x 1010 @ 23°C 1.2 x 1011 @ -40°C |
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Time Constant |
< 1 | ||
Amplifier Gain (V/A) | 25,000 | ||
Bandwidth (MHz) | 1 | ||
Active area (mm x mm) |
¼ x ¼, ½ x ½, 1 x 1 |