| Download ABaT™ 4.7 micron detector datasheet | |||
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Amethyst Barrier Technology, ABaT™, is Amethyst Research’s new and disruptive infrared (IR) detector technology which offers low noise and high responsivity with excellent linearity over a broad spectral range in the mid - wave IR region. The advanced unipolar barrier architecture reduces dark current, thereby improving signal-to-noise ratio. The use of III-V compound semiconductor materials leverages mature and stable fabrication processes for superior manufacturability. Detectors are available in TO-39 and TO-8 packages with active areas from ¼ to 1 mm 2. The operating temperature is optionally controllable by thermoelectric cooling. |
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Specifications |
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Parameter |
Value |
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| Detector Element | InAsSb | ||
| Detectivity D* (peak) (cmHz1/2W-1) |
2.4 x 109 @ 24°C 1.6 x 1010 @ -45°C |
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Time Constant |
< 1 | ||
| Dark current density (A/cm2) |
0.87 @ 24°C 0.02 @ -45°C |
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| Package types (with sapphire window) |
TO-8 3-Stg TEC |
TO-39 Uncooled |
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| Operating voltage (mV) |
0 to -300 | ||
| Active area (mm x mm) |
¼ x ¼, ½ x ½, 1 x 1 | ||
For large scale orders, we can also provide custome designed dectectors. Please contact us for further information.