ABaT™ Unipolar Barrier Detector 4.7 – 4.9 μm Cutoff Wavelength

Download ABaT™ 4.7 micron detector datasheet

Amethyst Barrier Technology, ABaT™, is Amethyst Research’s new and disruptive infrared (IR) detector technology which offers low noise and high responsivity with excellent linearity over a broad spectral range in the mid - wave IR region. The advanced unipolar barrier architecture reduces dark current, thereby improving signal-to-noise ratio. The use of III-V compound semiconductor materials leverages mature and stable fabrication processes for superior manufacturability.

Detectors are available in TO-39 and TO-8 packages with active areas from ¼ to 1 mm 2. The operating temperature is optionally controllable by thermoelectric cooling.


For large scale orders, we can also provide custome designed dectectors. Please contact us for further information.



Detector Element InAsSb
Detectivity D* (peak)
2.4 x 109 @ 24°C  
1.6 x 1010 @ -45°C

Time Constant

< 1
Dark current density
0.87 @ 24°C
0.02 @ -45°C
Package types
(with sapphire window)
3-Stg TEC
Operating voltage
0 to -300  
Active area
(mm x mm)
¼ x ¼, ½ x ½, 1 x 1