Amethyst Barrier Technology(ABaT)

Amethyst Barrier Technology (ABaT™) enables improved IR detector performance and reduced cooling requirements, by replacing the convential photdiode device type with a new device structure, the Unipolar Barrier Photodiode detector, which inherently suppresses device processes that degrade performance. This structure combined with the Amethyst Defect Mitigation (ADM™) proprietary process of UV hydrogenation results in a low cost, high performance detector for Gas & Chemical sensors and imaging applications.