January 2008
The National Science Foundation (NSF) awards Amethyst a SBIR Phase I contract based on its proposal for defect passivation of CdTe devices used in the detection of gamma rays.

February 2008
Missile Defense Agency awards Amethyst a Phase I SBIR to develop a wafer mapping technology.

June 2008- Amethyst receives a Missile Defense Agency (MDA) Phase II SBIR award for continuing work on defect passivation technologies targeting improved operability of HgCdTe focal plane arrays. The goal of the project is to significantly improve production yield of high-performance infrared detectors used within DoD, thus driving costs down and putting more of these high-end sensors in the hands of our warfighters.

July 2008
Amethyst hires scientist to oversee company’s materials growth operations. Dr. Brenda VanMil, an expert in Molecular Beam Epitaxy (MBE) will be based initially at the HgCdTe materials facility at the Army Research Laboratory in Adelphi, MD.

November 2008
Amethyst signs lease on a 4,100 sq.ft. building that marks the beginning of its transition from the technology incubator. Referred to as Amethyst Ardmore Operations (AAO), the building is located half-way between Ardmore and Lone Grove, OK.