Epitaxial Growth

Amethyst employs two Riber molecular beam epitaxy (MBE) tools in support of its materials growth operations.  Amethyst’s 5” Epineat system is configured for gallium nitride growth for use in light emitting diodes. The larger, Riber 49, 8” MBE system is our II-VI tool prepared to grow cadmium telluride wafers for solar cells.  Amethyst has two of the country’s leading experts [Jack Dinan and Colin Wood profiles] in the growth of II-VI materials on its staff.