Ion Channeling

RBS can be enhanced by ion channeling, a phenomenon that occurs in single-crystal samples when the ion beam is incident along or near a major crystallographic direction.  Ions entering a single-crystal along such a direction undergo correlated, small-angle collisions with the atoms in the atomic rows or planes leading to very regular oscillations of the ion trajectory within the lattice interstices. As a result, the backscattering yield for channeled ions is much reduced over that for ions moving randomly within the lattice. Since any atom displaced from a lattice site into the interstitial space will interact strongly with channeled ions, ion channeling can be used for structural characterization including profiling of defects and lattice strain, and lattice-location of impurities (i.e., interstitial or substitutional impurities).

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