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Developed for Government Agencies in Collaboration with Organizations in the Infrared Systems' Supply Chain.

We developed our extensive infrared technology know-how through 20 years of client-funded research (US government, UK government, private companies) and in-house R&D efforts. Many of the technologies in our portfolio stem from 60+ highly competitive government awards. We advance innovative technologies with commercial potential through:

  • Contract-based research (DOD & NASA contracts, Oklahoma Center for the Advancement of Science and Technology (OCAST), MoD contracts in the UK)

  • More exploratory, longer-term research (DOE & NSF grants, Innovate UK grants in the UK)

We achieve research results in collaboration with our partners & customers: research providers, manufacturers, other companies within the infrared supply chain, and systems integrators. With these interactions, our team develops the insights that lead us to deliver cutting-edge innovative technologies. We look forward to developing new technologies and solutions with you.

Our Current Scope

Epitaxial Designs

nBn, RCE-PD,

APD, SPAD,

plasmonic,

LED

III-V Epilayers

(Al, Ga, In) (N, P, As, Sb)

Wide range of doping control (Te, Zn, etc.)

Substrates GaSb, InAs, InP, Si

IR Ranges

Broad band (SWIR, MWIR, LWIR)

Narrow spectral
bands within the
1.6-12µ region

Formats

Single element,

linear arrays,

small 2D arrays,

LED arrays

There are many detector types corresponding to several important applications of infrared sensing.
Here are prominent detector types Amethyst Research staff are experts in:

nBn Barrier Detectors

Broadband response, low dark current for higher operating temperature or higher detectivity for infrared imaging, gas sensing, security, communications, medical imaging, and more

RCE-PDs Resonant-Cavity-Enhanced Photodiodes

Heightened response within a narrow band for maximum sensitivity for environmental monitoring, security and medical applications, spectroscopy

APDs Avalanche Photodiodes

Sophisticated structures
for low light level detection for telecommunications
medical imaging, environmental monitoring, security

SPAD Single Photon Avalanche Photodiode

A special case of APD useful for detecting single photons in a time-resolved way for quantum optics, quantum communications

Array Infrared LEDs

Large arrays of mid-infrared emitters are needed for infrared scene projector

Research and Development Areas

Resonant cavity enhanced photodetectors

Technology:
Performance MWIR and LWIR RCE-PDs with a ~50 times reduction in absorber volume.

Goal:
Sensing of several important medical and environmental gases including CO2, CH4, N2O, acetone and glucose.

Customer:
European Commission (ATTRACT)

Technology:
Paired resonant cavity LED and RCE-PD at 4.472 microns for detection of N2O.

Goal:
Greater resolution and lower cost in subsurface gas concentration measurements, leading to more accurate parameters for more accurate modeling of complex subsurface systems.

Customer:
US Department of Energy

Technology:
RCE-PD at 3.31microns, compatible with single-pixel camera imaging, for methane detection in the MWIR band.

Goal:
High sensitivity, low power, and lightweight imager for UAV’s and handheld systems to boost the scope of methane source mapping.

Customer:
US Department of Commerce

Technology:
LWIR RCE-PD (9.3 microns), paired with a sourced Quantum Cascade Laser (Pranalytica) capable of ~ GHz bandwidth.

Goal:
Free-space links using the LWIR band, where atmosphere absorption and scattering are weak, for secure communications.

Customer:
US Department of Defense (Air Force)

nBn infrared barrier photodetectors

Technology:
Sensor system for subsurface CO2 isotopologue discrimination, incorporating broadband, low-dark current nBn detector optimized for 4.36 microns.

Goal:
Low cost and accurate tool to support Monitoring, Verification, and Accounting in sequestration.

Customer:
US Department of Energy

Technology:
nBn detector on GaSb with absorber composition optimized for 2.0-2.5 microns (e-SWIR transmission band).

Goal:
Improved detectors for important e-SWIR applications such as imaging with nightglow, seeing through smoke/haze with less scattering, and spectroscopy.

Customer:
US Department of Defense (Army)

Technology:
nBn detector with highly manufacturable III-V materials, enhanced by hydrogenation and designed for cutoff wavelengths of 2 to 5 microns.

Goal:
Infrared detectors with reduced cooling requirements to bolster orbital and in situ compositional analysis and mapping in future planetary missions.

Customer:
National Aeronautics and Space Administration (NASA)

Technology:
Octave-spanning (3-6 micron), GHz-bandwidth, thermoelectrically cooled nBn detector with high sensitivity (Noise Equivalent Power < 1pW/Hz^1/2).

Goal:
Step-function increases in speed and sensitivity for portable, mid-infrared comb spectroscopy systems, within the SCOUT (Spectral Combs from UV to Terahertz) program.

Customer:
US Department of Defense (Defense Advanced Research Projects Agency)

Avalanche photodiodes: APD, SPAD

Technology:
GaAs and InP-based SPADs as a pathway for high volume scale-up of discrete components, monolithic integration and a pathway for multi-functional Quantum Photonic Integrated Circuits (QPICs).

Goal:
Improve epitaxial material deposition, fabrication uniformity and reliability.

Customer:
Innovate UK (QFoundry project)


Technology:
SPAD at a telecom wavelength, InGaAs and GaSb based and having > 100 MHz bandwidth, for integration with an AlGaAs-on-insulator entangled photon source (U. California, Santa Barbara).

Goal:
Disruptive component for emerging ground-to-satellite and satellite-to-satellite quantum encrypted communications and distributed quantum sensing.

Customer:
National Aeronautics and Space Administration (NASA)

Plasmonic detectors / metamaterials

Technology:
Low-loss infrared Ultrawide Type II Hyperbolic metamaterials based on heavily doped InAs and dry-etched into 1D square gratings with a period shorter than 5µm.

Goal:
Use III-V metamaterials as a low-low plasmonic material that can be integrated with traditional III-V infrared devices such as photodetectors and photoemitters at a large scale.

Customer:
US Department of Defense (Undersecretary Office)

Technology:
Integrated flat micro-lens arrays for III-V infrared detectors to provide light concentration in SWIR and MWIR.

Goal:
Improve detector performance by increasing signal for a given noise level, including enabling smaller diameter detectors that have higher bandwidths.

Customer:
Oklahoma Center for Science and Technology (OCAST)

Infrared light emitting diodes (LEDs)

Technology:
Tunable (MWIR, LWIR) Type-II Superlattice LED structures by heteroepitaxy on GaAs or Si.

Goal:
Affordable, high-power LED arrays with a high dynamic range (versus resistor arrays), capable of large areas and on a substrate with good heat dissipation, as core components of scene projection systems for infrared imager testing.

Customer:
US Department of Defense (Air Force)

Technology:
Resonant cavity Light-emitting diodes for infrared gas spectroscopy.

Goal:
Use RC-LEDs to replace costly Quantum cascade lasers (QCL) typically used for infrared gas spectroscopy systems. Demonstrate their use for environmental gas monitoring (N2O and other).

Customer:
US Department of Energy

Materials characterization and defect mitigation

Technology:
Marshaling a suite of ion beam methods (Elastic Recoil Detection Analysis for H, Nuclear Reaction Analysis for C and O, Particle Induced X-ray Emission for mineral composition, and ion beam Induced Luminescence) for quantification of C, H, and O in shale.

Goal:
More efficient and integrated characterization of shale to support oil and gas exploration.

Customer:
US Department of Energy

Technology:
Deuterium tagging for mapping of point defects of CdZnTe (CZT) substrates.

Goal:
In-process inspection tool for correlating crystal growth and wafer processing methods with defect types and concentrations, to improve the operability and yield of focal plane arrays grown on CZT.

Customer:
US Department of Defense (Missile Defense Agency)


Technology:
Passivation of dislocation defects by hydrogenation of HgCdTe on silicon.

Goal:
Improve the performance of HgCdTe on silicon in the LWIR region by reducing and/or electrically neutralizing the defects originating at the substrate/epilayer interface.

Customer:
US Department of Defense

Technology:
Photon-assisted hydrogenation process technology of HgCdTe Infrared Detectors.

Goal:
Improve the operability and performance of HgCdTe NIR avalanche photodiode arrays to lower the manufacturing costs of HgCdTe detectors.

Customer:
National Science Foundation (NSF)